-
1 double-diffused MOS
МОН-структура, виготовлена методом подвійної дифузії, ДМОН-структураEnglish-Ukrainian dictionary of microelectronics > double-diffused MOS
-
2 double-diffused MOS device
МОН ІС, виготовлена подвійною дифузієюEnglish-Ukrainian dictionary of microelectronics > double-diffused MOS device
-
3 double-diffused MOS transistor
МОН-транзистор, виготовлений методом подвійної дифузії, двохдифузійний МОН-транзистор, ДМОН-транзисторEnglish-Ukrainian dictionary of microelectronics > double-diffused MOS transistor
-
4 MOS
структура метал–оксид–напівпровідник, МОН-структура - aluminum-gate MOS
- avalanche-injection stacked gate MOS
- avalanche stacked gate MOS
- back-gate MOS
- bulk complementary MOS
- buried-channel MOS
- buried-oxide MOS
- clocked complementary MOS
- complementary symmetry MOS
- complementary MOS
- composite-gate MOS
- depletion MOS
- dielectric-insulated MOS
- dielectric-isolated MOS
- double-diffused MOS
- double-implanted MOS
- double-level polysilicon MOS
- elevated-electrode MOS
- enhancement MOS
- floating-gate MOS
- grooved-gate MOS
- high-threshold MOS
- high-voltage MOS
- ion-implanted MOS
- lateral-merged bipolar MOS
- low-threshold MOS
- merged MOS
- multigate MOS
- n-channelMOS
- nMOS
- p-channelMOS
- pMOS
- polycrystalline silicon-gate MOS
- quadruply self-aligned MOS
- refractory MOS
- resistive-gate MOS
- scaled MOS
- Schottky-barrier MOS
- self-aligned MOS
- silicon-gate MOS
- single-channel MOS
- single-poly gate MOS
- substrate-fed MOS
- vertical MOS
- V-groove MOS
- V-notch MOS -
5 transistor
транзистор - abrupt heterojunction bipolar transistor
- access transistor
- amorphous transistor
- avalanche-injector MOS transistor
- ballistic transistor
- barrier-emitter transistor
- beam-lead transistor
- bipolar junction transistor
- bipolar transistor
- bipolar quantum resonant tunneling transistor
- buried-channel MOS transistor
- buried-channel transistor
- buried-oxide MOS transistor
- charge-injection transistor
- chip transistor
- chip-and-wire transistor
- clamped transistor
- closed-gate MOS transistor
- collector-grounded transistor
- common-base transistor
- common-collector transistor
- common-emitter transistor
- complementary transistors
- composite transistor
- Darlington transistor
- deep depletion transistor
- deep-diode transistor
- depletion-mode MOS transistor
- depletion MOS transistor
- diffused-emitter-and-base transistor
- diffused planar transistor
- δ-doped field-effect transistor
- double-diffused MOS transistor
- double-heterojunction bipolar transistor
- double-implanted MOS transistor
- downward-scaled MOS transistor
- electrostatic induction transistor
- emitter-coupled transistor
- enhancement-mode MOS transistor
- enhancement MOS transistor
- epibase transistor
- epitaxial planar transistor
- epitaxial transistor
- fan-out transistor
- fast switching transistor
- field-effect transistor
- filamentary transistor
- floating-gate MOS transistor
- front-end transistor
- gate-modulated bipolar transistor
- GIMIC transistor
- grooved-gate MOS transistor
- heterojunction transistor
- high-electron mobility transistor
- high-performance transistor
- H-MOS transistor
- homojunction transistor
- hot-electron transistor
- integrated circuit transistor
- integrated transistor
- interdigitated transistor
- inverted transistor
- ion-implanted base transistor
- ion sensitive field effect transistor ISFET
- ion sensitive field effect transistor
- junction transistor
- lateral transistor
- load transistor
- low-power transistor
- memory transistor
- merged transistor
- mesa-typetransistor
- mesatransistor
- mesh-emitter transistor
- metal-alumina-semiconductor transistor
- metal-base transistor
- metal-gate MOS transistor
- metal-insulator-semiconductor transistor
- metal-nitride-oxide-semiconductor transistor
- metal-oxide-semiconductor transistor
- micropower transistor
- monoiythic hot-electron transistor
- multiemitter transistor
- multiple-emitter transistor
- multiple integrated transistor
- n-channel MOS transistor
- negative-impedance transistor
- n-p-n transistor
- off transistor
- on transistor
- optical transistor
- optoelectronic transistor
- overlay transistor
- parasitic transistor
- pass-gate transistor
- p-channel MOS transistor
- p-channel transistor
- permeable-base transistor
- piezo transistor
- planar transistor
- planar epitaxial transistor
- plastic transistor
- p-n-p transistor
- pull-up transistor
- punch-through transistor
- quantum-effect transistor
- quantum wire transistor
- radio-frequency transistor
- recessed-gate MOS transistor
- recessed-gate transistor
- resonant-gate transistor
- Schottky transistor
- Schottky-barrier collector transistor
- Schottky collector transistor
- Schottky-diode clamped transistor
- Schottky gated transistor
- sealed transistor
- series-connectedtransistors
- seriestransistors
- shallow-junction transistor
- silicon-gate MOS transistor
- silicon-gate transistor
- silicon-on-sapphire transistor
- stacked transistor
- static induction transistor
- stepped electrode transistor
- superconducting transistor
- surface-barrier transistor
- surface-charge transistor
- switching-type transistor
- switching transistor
- tandem transistor
- thin-film transistor
- T-MOS transistor
- trap-controlled transistor
- tunnel emitter transistor
- unijunction transistor
- unipolar transistor
- vertical transistor
- XMOS transistor
- 3D trench transistorEnglish-Ukrainian dictionary of microelectronics > transistor
-
6 device
1) прилад (напр. ІС, транзистор, діод); компонент; елемент 2) пристрій - active device
- add-on device
- analog device
- array device
- attached device
- backup device
- beam-leadeddevice
- beam-leaddevice
- bipolar device
- bipolar-MOS device
- blown-fuse device
- bubble-domain device
- bubble- device
- bucket-brigade device
- bulk асoustic-wave device
- bulk-channel carrier-transfer device
- bulk-effect device
- carrier-transfer device
- charge-coupled device
- charge-domain device
- charge-injection device
- charge-priming device
- charge-transfer device
- chip-and-wire device
- CMOS device
- CMOS/SOS device
- compound-semiconductor device
- contiguous-disk device
- controlled surface device
- custom-designed device
- custom device
- dense device
- depletion-modedevice
- depletiondevice
- dielectric isolation device
- diffused device
- discrete device
- double-diffused MOS device
- elastic-surface-wave device
- electrooptic device
- elementary device
- enchancement-mode device
- enchancement device
- end-use device
- epiplanar device
- epitaxial device
- FAMOS device
- field-effect device
- field-programmable device
- FIMOS device
- functional device
- graded-gap semiconductor device
- graded-gap device
- Gurm-effect device
- Gurm device
- Hall-effectdevice
- Halldevice
- hardeneddevice
- harddevice
- heteroepitaxial device
- heterojunction device
- high-gain device
- high-immunity noise device
- high-technology device
- high-threshold device
- homojunction device
- hybrid high-power device
- identification device
- I2L device
- image [imaging] device
- IMPATT device
- implanted device
- integrated-optic device
- integrated semiconductor device
- integration device
- interdigitated device
- interface device
- Josephson-junctiondevice
- Josephsondevice
- Josephson logic device
- junction-isolated device
- large-scale integrated device
- large-scale integration device
- latch-up free CMOS device
- leaded device
- leadless inverted device
- light-wave device
- locked-in device
- logic array device
- low-power Schottky device
- magnetostatic-wave device
- majority-carrier device
- mask-programmable device
- metal-masked device
- metal-semiconductor device
- microdiscrete device
- microelectronic device
- minority-carrier device
- MIS-type device
- MIS device
- mixed-process device
- mixed device
- molecular-beam epitaxy-based device
- monolithic device
- MOS device
- MTL device
- multilayered device
- multilevel device
- n-channel MOS device
- n-channel device
- negative-resistance device
- non-CPU device
- n–p–n device
- off-chip device
- on-chip device
- optocoupler semiconductor device
- optocoupling device
- passive device
- p-channel MOS device
- p-channel device
- peripheral device
- permalloy bubble device
- permalloy T-bar device
- photo-coupled semiconductor device
- photosensitive device
- piezoelectric device
- piggyback device
- planar device
- plotting device
- plug-in device
- p-n-p device
- positioning device
- printing device
- programmable logic-array device
- programmable device
- quantum device
- quantum-well device
- redundancy device
- resin-molded device
- SAW device
- SAW delay device
- scaled-downdevice
- scaleddevice
- Schottky-barrier device
- Schottky device
- second-source device
- self-aligned semiconductor device
- semiconductor-on-sapphire
- silicon-on-dielectric device
- silicon-on-insulator device
- silicon-on-sapphire device
- single device
- single-crystal device
- slow device
- SLS device
- small-geometry device
- solder-evacuator device
- SOS/MOS device
- stacked semiconductor device
- static-sensitive device
- stripeline device
- submicron-scale MOS device
- superconducting Josephson-junction device
- superconducting quantum interference device
- superconductive quantum interferometric device
- super-lattice functional device
- superstructure device
- surface-acoustic-wave device
- surface charge-transfer device
- surface-mounted device
- switching device
- TAB device
- thermocompression bonded device
- thick-film device
- thin-film device
- transcalent device
- transferred-electron device
- transil-time-negative-resistance device
- trench isolated device
- tunnel -еffect device
- tunnel device
- two-level polysilicon MOS device
- ULA device
- ultrafine-scale device
- ultra-large-scale integrated device
- ultra-submicron device
- uncased device
- vertical-junction device
- very large-scale integrated-circuit device
- very large-scale integration device
- V-groove MOS device
- V-groove device
- wafer-printing device -
7 process
1. ім.1) процес; (технологічний) метод, спосіб2) технологія (див. т-ж technique, technology)3) (технологічна) обробка; технологічна операція2. дієсл. обробляти; проводити технологічну операцію - all-ion-implant process
- all-planar process
- Auger process
- batch process
- BH bias and hardness process
- BH process
- bonding process
- BOX process
- bulk CMOS process
- bumping process
- chip-on-board process
- closed CMOS process
- CMOS-on-sapphire process
- composite сеll logic process
- contact process
- conventional process
- deep охide isolation process
- DIFET process
- diffused eutectic aluminum process
- direct synthesis and crystal pull process
- double-diffused process
- double ion-implanted process
- double-layer polysilicon gate MOS process
- double-layer polysilicon gate process
- epitaxial deposition process
- epitaxial process
- epitaxial growth process
- flip-over process
- floating-gate silicon process
- front-end process
- gold-doped process
- guard-banded CMOS process
- heterogeneous process
- high-voltage process
- HMOS process
- imaging process
- implantation process
- in-house process
- interconnection process
- inverted meniscus process
- ion plating process
- isoplanar -S, -Z, -2 process
- isoplanar process
- junction-isolated process
- laser-recrystallized process
- lithographic process
- low-pressure process
- low VT process
- lost wafer process
- major process
- masking process
- master slice process
- mesa-isolation process
- metal-gate MOS process
- metal-gate process
- microbipolar LSI process
- micrometer-dimension process
- mid-film process
- Minimod process
- Mo-gate MOS process
- Mo-gate process
- nitride process
- nitrideless process
- NSA process
- oxide-film isolation process
- oxide isolated process
- oxygen refilling process
- patterning process
- phosphorous buried-emitter process
- photoablative process
- photolithography process
- photoresist process
- planar oxidation process
- Planox process
- plasma etch process
- Poly I process
- Poly II process
- Poly 5 process
- poly-oxide process
- Poly-Si process
- polysilicon-gate process
- poly-squared MOS process
- proprietary process
- PSA bipolar process
- PSA process
- refractory metal MOS process
- refractory metal process
- sacrificial охide process
- sapphire dielectric isolation process
- scaled Poly 5 process
- screen-and-fire process
- selective field-охidation process
- self-aligned gate process
- self-aligned process
- self-registered gate process
- self-registered process
- semi-additive process
- semiconductor-thermoplastic-dielectric process
- semicustom process
- shadow masking process
- silk-screen process
- single poly process
- SMOS process
- SOS/CMOS process
- stacked fuse bipolar process
- Stalicide process
- step-and-repeat process
- subtractive-fabrication process
- surface process
- Telemos process
- thermal process
- thermally асtivated surface process
- thermal-охidation process
- three-mask process
- triple-diffused process
- triply-poly process
- twin-tub process
- twin-well process
- V-groove MOS process
- V-groove process
- wet process
- 3-D process
См. также в других словарях:
double-diffused MOS — dvikartinės difuzijos MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double diffused metal oxide semiconductor structure; double diffused MOS vok. Doppeldifusions MOS Struktur, f rus. двухдиффузионная структура метал окисел… … Radioelektronikos terminų žodynas
double-diffused MOS field-effect transistor — dvikartinės difuzijos MOP tranzistorius statusas T sritis radioelektronika atitikmenys: angl. double diffused MOS field effect transistor; double diffused MOS transistor vok. doppeldiffundiertes MOS Transistor, m; Doppeldiffusion MOS Transistor,… … Radioelektronikos terminų žodynas
double-diffused MOS transistor — dvikartinės difuzijos MOP tranzistorius statusas T sritis radioelektronika atitikmenys: angl. double diffused MOS field effect transistor; double diffused MOS transistor vok. doppeldiffundiertes MOS Transistor, m; Doppeldiffusion MOS Transistor,… … Radioelektronikos terminų žodynas
V-groove double-diffused MOS — dvikartinės difuzijos MOP darinys su V grioveliais statusas T sritis radioelektronika atitikmenys: angl. V groove double diffused MOS; V groove double diffused MOS structure vok. Doppeldiffusions V Graben MOS Struktur, f rus. двухдиффузионная МОП … Radioelektronikos terminų žodynas
V-groove double-diffused MOS structure — dvikartinės difuzijos MOP darinys su V grioveliais statusas T sritis radioelektronika atitikmenys: angl. V groove double diffused MOS; V groove double diffused MOS structure vok. Doppeldiffusions V Graben MOS Struktur, f rus. двухдиффузионная МОП … Radioelektronikos terminų žodynas
vertical double-diffused MOS — stačiasis dvikartinės difuzijos MOP darinys statusas T sritis radioelektronika atitikmenys: angl. vertical double diffused MOS; vertical double diffused MOS structure vok. vertikale Doppeldiffusions MOS Struktur, f rus. двухдиффузионная… … Radioelektronikos terminų žodynas
vertical double-diffused MOS structure — stačiasis dvikartinės difuzijos MOP darinys statusas T sritis radioelektronika atitikmenys: angl. vertical double diffused MOS; vertical double diffused MOS structure vok. vertikale Doppeldiffusions MOS Struktur, f rus. двухдиффузионная… … Radioelektronikos terminų žodynas
double-diffused metal-oxide-semiconductor structure — dvikartinės difuzijos MOP darinys statusas T sritis radioelektronika atitikmenys: angl. double diffused metal oxide semiconductor structure; double diffused MOS vok. Doppeldifusions MOS Struktur, f rus. двухдиффузионная структура метал окисел… … Radioelektronikos terminų žodynas
Double Diffused Metal Oxide Semiconductor Field Effect Transistor — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-FET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-Fet — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
